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| IRF840AS Datasheet, PDF (2/10 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) | |||
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IRF840AS/L
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
500 âââ âââ
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient âââ 0.58 âââ
RDS(on)
Static Drain-to-Source On-Resistance âââ âââ 0.85
VGS(th)
Gate Threshold Voltage
2.0 âââ 4.0
IDSS
Drain-to-Source Leakage Current
âââ âââ 25
âââ âââ 250
Gate-to-Source Forward Leakage
âââ âââ 100
IGSS
Gate-to-Source Reverse Leakage
âââ âââ -100
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
gfs
Forward Transconductance
3.7 âââ âââ
Qg
Total Gate Charge
âââ âââ 38
Qgs
Gate-to-Source Charge
âââ âââ 9.0
Qgd
Gate-to-Drain ("Miller") Charge
âââ âââ 18
td(on)
Turn-On Delay Time
âââ 11 âââ
tr
Rise Time
âââ 23 âââ
td(off)
Turn-Off Delay Time
âââ 26 âââ
tf
Fall Time
âââ 19 âââ
Ciss
Input Capacitance
âââ 1018 âââ
Coss
Output Capacitance
âââ 155 âââ
Crss
Reverse Transfer Capacitance
âââ 8.0 âââ
Coss
Output Capacitance
âââ 1490 âââ
Coss
Output Capacitance
âââ 42 âââ
Coss eff. Effective Output Capacitance
âââ 56 âââ
V
V/°C
â¦
V
µA
nA
Units
S
nC
ns
pF
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mAÂ
VGS = 10V, ID = 4.8A Â
VDS = VGS, ID = 250µA
VDS = 500V, VGS = 0V
VDS = 400V, VGS = 0V, TJ = 125°C
VGS = 30V
VGS = -30V
Conditions
VDS = 50V, ID = 4.8A
ID = 8.0A
VDS = 400V
VGS = 10V, See Fig. 6 and 13 ÂÂ
VDD = 250V
ID = 8.0A
RG = 9.1â¦
RD = 31â¦,See Fig. 10 ÂÂ
VGS = 0V
VDS = 25V
Æ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
VGS = 0V, VDS = 400V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 480V Â
Â
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche EnergyÂ
IAR
Avalanche CurrentÂ
EAR
Repetitive Avalanche EnergyÂ
Typ.
âââ
âââ
âââ
Max.
510
8.0
13
Units
mJ
A
mJ
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted, steady-state)*
Typ.
âââ
âââ
Max.
1.0
40
Units
°C/W
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
2
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ 8.0
A showing the
integral reverse
G
âââ âââ 32
p-n junction diode.
S
âââ âââ 2.0 V TJ = 25°C, IS = 8.0A, VGS = 0V Â
âââ 422 633 ns TJ = 25°C, IF = 8.0A
âââ 2.0 3.0 µC di/dt = 100A/µs Â
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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