IRF8301MPBF Datasheet, PDF (6/10 Pages) International Rectifier – DirectFET

Power MOSFET

1000
100
TJ = 150°C
TJ = 25°C
TJ = -40°C
10
IRF8301MTRPbF
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
10msec
DC
1msec
100µsec
1
VGS = 0V
0
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VSD, Source-to-Drain Voltage (V)
Fig 11. Typical Source-Drain Diode Forward Voltage
200
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 12. Maximum Safe Operating Area
3.0
160
2.5
120
2.0
80
40
0
25
50
75
100 125 150
TC , Case Temperature (°C)
Fig 13. Maximum Drain Current vs. Case Temperature
1200
1000
800
1.5 ^{ID = 100µA}
ID = 150µA
ID = 250µA
1.0 ID = 1.0mA
ID = 1.0A
0.5
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 14. Typical Threshold Voltage vs. Junction
Temperature
ID
TOP 2.7A
3.9A
BOTTOM 25A
600
400
200
0
25
50
75
100 125 150
Starting TJ , Junction Temperature (°C)
Fig 15. Maximum Avalanche Energy vs. Drain Current
6
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September 6, 2013