IRF8301MPBF Datasheet, PDF (2/10 Pages) International Rectifier – DirectFET

Power MOSFET

IRF8301MTRPbF
Static @ T_J = 25°C (unless otherwise specified)
Parameter
Min.
BV_DSS
∆ΒV_DSS/∆T_J
R_DS(on)
Drain-to-Source Breakdown Voltage
30
Breakdown Voltage Temp. Coefficient –––
Static Drain-to-Source On-Resistance –––
–––
V_GS(th)
∆V_GS(th)/∆T_J
I_DSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
1.35
–––
–––
–––
I_GSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs
Forward Transconductance
150
Q_g
Total Gate Charge
Q_gs1
Pre-Vth Gate-to-Source Charge
Q_gs2
Post-Vth Gate-to-Source Charge
Q_gd
Gate-to-Drain Charge
Q_godr
Gate Charge Overdrive
Q_sw
Switch Charge (Q_gs2 + Q_gd)
Q_oss
Output Charge
R_G
Gate Resistance
t_d(on)
Turn-On Delay Time
t_r
Rise Time
t_d(off)
Turn-Off Delay Time
t_f
Fall Time
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
Diode Characteristics
Parameter
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
I_S
Continuous Source Current
–––
(Body Diode)
I_SM
Ãg ^{Pulsed Source Current}
(Body Diode)
–––
V_SD
Diode Forward Voltage
–––
t_rr
Reverse Recovery Time
–––
Q_rr
Reverse Recovery Charge
–––
Typ.
–––
21
1.3
1.9
1.7
-6.0
–––
–––
–––
–––
–––
51
12
5.4
16
18
21
28
1.0
20
30
25
17
6140
1270
590
Typ.
–––
–––
0.77
27
45
Max. Units
Conditions
–––
–––
1.5
2.4
2.35
–––
V V_GS = 0V, I_D = 250µA
mV/°C Reference to 25°C, I_D = 1mA
i mΩ V_GS = 10V, I_D = 32A
i V_GS = 4.5V, I_D = 25A
V V_DS = V_GS, I_D = 150µA
mV/°C
1.0
150
100
-100
–––
77
µA V_DS = 24V, V_GS = 0V
V_DS = 24V, V_GS = 0V, T_J = 125°C
nA V_GS = 20V
V_GS = -20V
S V_DS = 15V, I_D = 25A
–––
V_DS = 15V
––– nC V_GS = 4.5V
–––
I_D = 25A
–––
See Fig. 15
–––
––– nC V_DS = 16V, V_GS = 0V
3.0 Ω
–––
Ãi V_DD = 15V, V_GS = 4.5V
––– ns I_D = 25A
–––
R_G = 1.8Ω
–––
See Fig. 17
–––
V_GS = 0V
––– pF V_DS = 15V
–––
ƒ = 1.0MHz
Max. Units
Conditions
110
MOSFET symbol
A showing the
250
integral reverse
p-n junction diode.
1.0
i V T_J = 25°C, I_S = 25A, V_GS = 0V
41
68
i ^{ns TJ = 25°C, IF = 25A}
nC di/dt = 500A/µs
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
„ T_C measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting T_J = 25°C, L = 0.82mH, R_G = 25Ω, I_AS = 25A.
‡ Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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September 6, 2013