IRF7910 Datasheet, PDF (6/8 Pages) International Rectifier – HEXFET Power MOSFET

IRF7910
0.0145
0.0140
0.0135
0.0130
0.0125
VGS = 4.5V
0.020
0.018
0.015
0.013
ID = 8.0A
0.0120
0
20
40
60
80
ID , Drain Current (A)
0.010
100
2.5
3.5
4.5
5.5
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
.3µF
V_GS
3mA
D.U.T.
+
-V^DS
V_GS
Q_GS
V_G
I_G
I_D
Current Sampling Resistors
Q_G
Q_GD
Charge
Fig 13. On-Resistance Vs. Gate Voltage
250
ID
TOP
3.6A
6.4A
200
BOTTOM
8.0A
Fig 14a&b. Basic Gate Charge Test Circuit
150
and Waveform
100
V(BR)DSS
tp
I AS
VDS
L
RG
20V
tp
D.U.T
I_AS
0.01Ω
15V
DRIVER
+
-
VDD
A
50
0
25
50
75
100
Starting T , J_Junction Temperature
125
150
( ^°C)
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
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