IRF7910 Datasheet, PDF (4/8 Pages) International Rectifier – HEXFET Power MOSFET

IRF7910
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
100
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
12
ID= 8.0A
10
8
VDS= 9.6V
VDS= 6.0V
6
4
2
0
0
FOR TEST CIRCUIT
SEE FIGURE 13
10
20
30
40
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100.0
10.0 TJ = 150°C
1.0
TJ = 25°C
0.1
0.0
VGS = 0V
0.5
1.0
1.5
2.0
VSD, Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100
100µsec
10
1msec
Tc = 25°C
Tj = 150°C
Single Pulse
1
0
1
10msec
10
100
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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