IRF7836PBF Datasheet, PDF (6/9 Pages) International Rectifier – HEXFET Power MOSFET

IRF7836PbF
16
ID = 17A
14
12
10
8
TJ = 125°C
6
4
TJ = 25°C
2
0
0 2 4 6 8 10 12 14 16 18
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
I_AS
0.01Ω
+
- ^VDD
A
Fig 14a. Unclamped Inductive Test Circuit
V_(BR)DSS
tp
500
ID
TOP 1.0A
400
1.3A
BOTTOM 13A
300
200
100
0
25
50
75
100 125 150
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy
vs. Drain Current
L_D
V_DS
V_DD
V_GS
Pulse Width < 1µs
Duty Factor < 0.1%
D.U.T
Fig 15a. Switching Time Test Circuit
V_DS
90%
I_AS
Fig 14b. Unclamped Inductive Waveforms
6
10%
V_GS
t_{d(on) tf}
t_{d(off) tr}
Fig 15b. Switching Time Waveforms
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