IRF7836PBF Datasheet, PDF (5/9 Pages) International Rectifier – HEXFET Power MOSFET

IRF7836PbF
18
16
14
12
10
8
6
4
2
0
25
50
75
100 125 150
TA , Ambient Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
2.5
2.0
ID = 50µA
1.5
1.0
0.5
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
100
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
0.1
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
τ_{J τJ}
τ_{1 τ1}
R_1R1
Ci= τi/Ri
Ci= τi/Ri
R_2R2
τ_{2 τ2}
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
R_3R3
τ_{3 τ3}
τ_AτA
Ri (°C/W)
5.745666
27.28631
16.97549
τi (sec)
0.00553
1.1417
46.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Ta
10
100
1000
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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