IRF7821PBF Datasheet, PDF (6/10 Pages) International Rectifier – HEXFET®Power MOSFET

IRF7821PbF
30
ID = 13A
25
20
15
TJ = 125°C
10
5
TJ = 25°C
0
2.0
4.0
6.0
8.0
10.0
VGS, Gate-to-Source Voltage (V)
Fig 12. On-Resistance Vs. Gate Voltage
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
I_AS
0.01Ω
+
-
VDD
A
Fig 13a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
100
ID
TOP
4.5A
80
8.0A
BOTTOM ^10A
60
40
20
0
25
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
Fig 13c. Maximum Avalanche Energy
Vs. Drain Current
L_D
V_DS
V_DD
V_GS
Pulse Width < 1µs
Duty Factor < 0.1%
D.U.T
Fig 14a. Switching Time Test Circuit
V_DS
90%
I_AS
Fig 13b. Unclamped Inductive Waveforms
6
10%
V_GS
t_{d(on) tf}
t_{d(off) tr}
Fig 14b. Switching Time Waveforms
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