 English |
|
|
|
|
|
|
|
| IRF7821PBF Datasheet, PDF (2/10 Pages) International Rectifier – HEXFET®Power MOSFET | |||
| |||
| ◁ |
IRF7821PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
âÎVDSS/âTJ
RDS(on)
VGS(th)
âVGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
30 âââ âââ V VGS = 0V, ID = 250µA
âââ
âââ
âââ
0.025 âââ
7.0 9.1
9.5 12.5
V/°C Reference to 25°C, ID = 1mA
e m⦠VGS = 10V, ID = 13A
e VGS = 4.5V, ID = 10A
1.0 âââ âââ V VDS = VGS, ID = 250µA
âââ - 4.9 âââ mV/°C
IDSS
Drain-to-Source Leakage Current
âââ âââ 1.0 µA VDS = 24V, VGS = 0V
âââ âââ 150
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
âââ âââ 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
âââ âââ -100
VGS = -20V
gfs
Forward Transconductance
Qg
Total Gate Charge
22 âââ âââ
âââ 9.3 14
S VDS = 15V, ID = 10A
Qgs1
Qgs2
Qgd
Qgodr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
âââ 2.5 âââ
VDS = 15V
âââ 0.8 âââ nC VGS = 4.5V
âââ 2.9 âââ
ID = 10A
âââ 3.1 âââ
See Fig. 16
Qsw
Switch Charge (Qgs2 + Qgd)
âââ 3.7 âââ
Qoss
td(on)
tr
td(off)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
âââ
âââ
6.1
6.3
âââ
âââ
e nC VDS = 10V, VGS = 0V
VDD = 15V, VGS = 4.5V
âââ 2.7 âââ
ID = 10A
âââ 9.7 âââ ns Clamped Inductive Load
tf
Fall Time
âââ 7.3 âââ
Ciss
Input Capacitance
âââ 1010 âââ
VGS = 0V
Coss
Output Capacitance
âââ 360 âââ pF VDS = 15V
Crss
Reverse Transfer Capacitance
âââ 110 âââ
Æ = 1.0MHz
Avalanche Characteristics
EAS
IAR
dh Parameter
Single Pulse Avalanche Energy
 Avalanche Current
Typ.
âââ
âââ
Max.
44
10
Units
mJ
A
Diode Characteristics
Parameter
IS
Continuous Source Current
Min. Typ. Max. Units
Conditions
âââ âââ 3.1
MOSFET symbol
(Body Diode)
ISM
Pulsed Source Current
ÃÂh (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
âââ âââ 100
âââ âââ 1.0
âââ 28 42
âââ 23 35
A showing the
integral reverse
e p-n junction diode.
V TJ = 25°C, IS = 10A, VGS = 0V
e ns TJ = 25°C, IF = 10A, VDD = 20V
nC di/dt = 100A/µs
2
www.irf.com
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese