IRF7805ZGPBF Datasheet, PDF (6/10 Pages) International Rectifier – HEXFET

Power MOSFET

IRF7805ZGPbF
0.03
0.02
0.01
TJ = 125°C
TJ = 25°C
0.00
2.0
4.0
6.0
8.0
10.0
VGS, Gate-to-Source Voltage (V)
Fig 12. On-Resistance Vs. Gate Voltage
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
I_AS
0.01Ω
+
-
VDD
A
Fig 13a. Unclamped Inductive Test Circuit
V_(BR)DSS
tp
300
ID
TOP 6.0A
250
6.9A
BOTTOM 12A
200
150
100
50
0
25
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
Fig 13c. Maximum Avalanche Energy
Vs. Drain Current
L_D
V_DS
+
V_DD -
V_GS
Pulse Width < 1µs
Duty Factor < 0.1%
D.U.T
Fig 14a. Switching Time Test Circuit
V_DS
90%
I_AS
Fig 13b. Unclamped Inductive Waveforms
6
10%
V_GS
t_{d(on) tr}
t_{d(off) tf}
Fig 14b. Switching Time Waveforms
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