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| IRF7805ZGPBF Datasheet, PDF (2/10 Pages) International Rectifier – HEXFETPower MOSFET | |||
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IRF7805ZGPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
âÎVDSS/âTJ
RDS(on)
VGS(th)
âVGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
30 âââ âââ V VGS = 0V, ID = 250µA
âââ 0.023 âââ
âââ 5.5 6.8
âââ 7.0 8.7
V/°C Reference to 25°C, ID = 1mA
e m⦠VGS = 10V, ID = 16A
e VGS = 4.5V, ID = 13A
1.35 âââ 2.25 V VDS = VGS, ID = 250µA
âââ - 4.7 âââ mV/°C
IDSS
Drain-to-Source Leakage Current
âââ âââ 1.0 µA VDS = 24V, VGS = 0V
âââ âââ 150
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
âââ âââ 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
âââ âââ -100
VGS = -20V
gfs
Forward Transconductance
Qg
Total Gate Charge
64 âââ âââ
âââ 18 27
S VDS = 15V, ID = 12A
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
âââ 4.7 âââ
VDS = 15V
âââ 1.6 âââ nC VGS = 4.5V
âââ 6.2 âââ
ID = 12A
âââ 5.5 âââ
See Fig. 16
âââ 7.8 âââ
Qoss
Output Charge
âââ 10 âââ nC VDS = 16V, VGS = 0V
RG
td(on)
tr
td(off)
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
âââ 1.0 2.1
âââ 11 âââ
â¦
e VDD = 15V, VGS = 4.5V
âââ 10 âââ
ID = 12A
âââ 14 âââ ns Clamped Inductive Load
tf
Fall Time
âââ 3.7 âââ
Ciss
Input Capacitance
âââ 2080 âââ
VGS = 0V
Coss
Output Capacitance
âââ 480 âââ pF VDS = 15V
Crss
Reverse Transfer Capacitance
âââ 220 âââ
Æ = 1.0MHz
Avalanche Characteristics
EAS
IAR
d Parameter
Single Pulse Avalanche Energy
 Avalanche Current
Typ.
âââ
âââ
Max.
72
12
Units
mJ
A
Diode Characteristics
Parameter
IS
Continuous Source Current
Min. Typ. Max. Units
Conditions
âââ âââ 3.1
MOSFET symbol
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
âââ âââ 120
A showing the
integral reverse
âââ âââ 1.0
e p-n junction diode.
V TJ = 25°C, IS = 12A, VGS = 0V
âââ 29
âââ 20
44
30
e ns TJ = 25°C, IF = 12A, VDD = 15V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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