IRF7504 Datasheet, PDF (6/8 Pages) International Rectifier – Power MOSFET(Vdss=-20V, Rds(on)=0.27ohm)

IRF7504
Peak Diode Recovery dv/dt Test Circuit
D.U.T
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‚
-
+
Circuit Layout Considerations
• Low Stray Inductance
ƒ
• Ground Plane
• Low Leakage Inductance
Current Transformer
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-
„
+

R_G
V_GS*
**
• dv/dt controlled by R_G
• I_SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
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-
V_DD^*
* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[
] ***
V_GS=10V
D.U.T. I_SD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V_DS Waveform _{Diode Recovery}
dv/dt
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple ≤ 5%
[]
V_DD
[]
I_SD
*** V_GS = 5.0V for Logic Level and 3V Drive Devices
Fig 12. For P-Channel HEXFETS