IRF7504 Datasheet, PDF (4/8 Pages) International Rectifier – Power MOSFET(Vdss=-20V, Rds(on)=0.27ohm)

IRF7504
500
V GS = 0V ,
f = 1MHz
C _iss = C_gs + C _gd , C_ds SHO RTED
C _rss = C _{g d}
400
C oss = C ds + C gd
C is s
300
C oss
200
C rs s
100
0
A
1
10
100
-V_{D S} , D rain-to-S ource V oltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10
T_J = 150°C
1
0.1
T_J = 25°C
0.01
0.4
VGS = 0V _A
0.6
0.8
1.0
1.2
-V_SD , S ource-to-Drain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
10
I _D = -1.2A
V_{D S} = -16V
8
6
4
2
FOR TE ST CIRCUIT
SE E FIGURE 9
0
A
0
2
4
6
8
10
Q _G , Total G ate C harge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
OPE R ATIO N IN TH IS A RE A LIMITE D
BY R D S(o n)
10
1 00µs
1m s
1
10m s
T_A = 25°C
T_J = 150°C
S ing le Pulse
0.1
1
10
A
100
-V_DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area