IRF6613PBF_15 Datasheet, PDF (6/9 Pages) International Rectifier – Ideal for CPU Core DC-DC Converters

IRF6613PbF
+
‚
-

R_G
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W.
Period
ƒ
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
-
• Low Leakage Inductance
Current Transformer
D.U.T. I_SD Waveform
-^„ +
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V_DS Waveform
Diode Recovery
dv/dt
• di/dt controlled by R_G
• Driver same type as D.U.T.
• I_SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
V_DD
Re-Applied
+ Voltage
-
Body Diode
In^Idⁿu^dc^ut^co^tor ^rC^Cu^ure^rrn^et^nt
Forward Drop
Ripple ≤ 5%
* V_GS = 5V for Logic Level Devices
* _VGS=10V
V_DD
I_SD
Fig 17. Diode Reverse Recovery Test Circuit for N-Channel
HEXFET^® Power MOSFETs
DirectFET™ Substrate and PCB Layout, MT Outline
(Medium Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
G = GATE
D = DRAIN
S = SOURCE
D
D
S
G
S
D
D
6
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