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| IRF6613PBF_15 Datasheet, PDF (1/9 Pages) International Rectifier – Ideal for CPU Core DC-DC Converters | |||
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l RoHS Compliant Â
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible Â
l Compatible with existing Surface Mount Techniques Â
PD - 97087A
IRF6613PbF
IRF6613TRPbF
DirectFETÂ Power MOSFET Â
VDSS
40V
RDS(on) max
3.4mâ¦@VGS = 10V
4.1mâ¦@VGS = 4.5V
Qg(typ.)
42nC
MT
DirectFETÂ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details)
SQ
SX
ST
MQ
MX
MT
Description
The IRF6613PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6613PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6613PbF has been optimized for parameters that are critical in synchronous buck converters including
Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6613PbF offers particularly low Rds(on) and high Cdv/dt immunity for
synchronous FET applications.
Absolute Maximum Ratings
Parameter
VDS
Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TC = 25°C
PD @TA = 25°C
PD @TA = 70°C
EAS
IAR
Gate-to-Source Voltage
k Continuous Drain Current, VGS @ 10V
Ãh Continuous Drain Current, VGS @ 10V
h Continuous Drain Current, VGS @ 10V
e Pulsed Drain Current
k Power Dissipation
h Power Dissipation
h Power Dissipation
f Single Pulse Avalanche Energy
Ãe Avalanche Current
hà Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Max.
40
±20
150
23
18
180
89
2.8
1.8
200
18
0.022
-40 to + 150
Units
V
A
W
mJ
A
W/°C
°C
Thermal Resistance
Parameter
RθJA
hl Junction-to-Ambient
RθJA
il Junction-to-Ambient
RθJA
jl Junction-to-Ambient
RθJC
kl Junction-to-Case
RθJ-PCB
Junction-to-PCB Mounted
Notes  through  are on page 2
www.irf.com
Typ.
âââ
12.5
20
âââ
1.0
Max.
45
âââ
âââ
1.4
âââ
Units
°C/W
1
7/3/06
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