IRF630N_04 Datasheet, PDF (6/11 Pages) International Rectifier – HEXFET Power MOSFET

IRF630N/S/L
15V
VDS
L
DRIVER
RG
20V
tp
D.U.T
I_AS
0.01Ω
+
- ^VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V_(BR)DSS
tp
I_AS
Fig 12b. Unclamped Inductive Waveforms
Q_G
10 V
Q_GS
Q_GD
V_G
Charge
Fig 13a. Basic Gate Charge Waveform
200
ID
TOP
2.2A
3.8A
BOTTOM 5.4A
150
100
50
0
25
50
75 100 125 150 175
Starting T_J , Junction Temperature (^° C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
.3µF
+
D.U.T. -V^DS
V_GS
3mA
I_G
I_D
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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