AUIRGS4062D1 Datasheet, PDF (6/15 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

35
30
25
20
15
0
200 400 600 800 1000 1200
diF /dt (A/μs)
Fig. 19 - Typ. Diode I_RR vs. di_F/dt
V_CC = 400V; V_GE = 15V; I_F = 24A; T_J = 175°C
2000
1500
1000
500
RG = 10Ω
RG = 22Ω
RG = 47Ω
RG = 100Ω
0
10
20
30
40
50
IF (A)
Fig. 21 - Typ. Diode E_RR vs. I_F
T_J = 175°C
10000
1000
Cies
Coes
100
Cres
10
0
100 200 300 400 500
VCE (V)
Fig. 23 - Typ. Capacitance vs. V_CE
V_GE= 0V; f = 1MHz
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AUIRGB/S/SL4062D1
6000
5000
48A
4000
47Ω
3000 ^100Ω
10Ω
22Ω
24A
2000
12A
1000
200 400 600 800 1000 1200
diF /dt (A/μs)
Fig. 20 - Typ. Diode Q_RR vs. di_F/dt
V_CC = 400V; V_GE = 15V; T_J = 175°C
16
250
12
Tsc
8
200
Isc
150
4
100
0
50
8
10
12
14
16
18
VGE (V)
Fig. 22 - V_GE vs. Short Circuit Time
V_CC = 400V; T_C = 25°C
16
14
VCES = 400V
12
VCES = 300V
10
8
6
4
2
0
0 10 20 30 40 50 60
Q _G, Total Gate Charge (nC)
Fig. 24 - Typical Gate Charge vs. V_GE
I_CE = 24A; L = 585μH
May 02, 2013