AUIRGS4062D1 Datasheet, PDF (1/15 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

AUTOMOTIVE GRADE
AUIRGB4062D1
AUIRGS4062D1
AUIRGSL4062D1
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low V_{CE (on)} Trench IGBT Technology
• Low Switching Losses
• 5μs SCSOA
• Square RBSOA
• 100% of The Parts Tested for I_LM
• Positive V_{CE (on)} Temperature Coefficient.
• Ultra Fast Soft Recovery Co-pak Diode
• Tighter Distribution of Parameters
• Lead-Free, RoHS Compliant
• Automotive Qualified *
Benefits
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due
to Low V_{CE (ON)} and Low Switching Losses
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation
• Low EMI
Applications
• Air Conditioning Compressor
Ordering Information
C
V_CES = 600V
I_C(Nominal) = 24A
G
E
n-channel
t_SC ≥ 5μs, T_J(max) = 175°C
V_CE(on) typ. = 1.57V
C
C
C
E
C
G
TO-220AB
AUIRGB4062D1
G
Gate
E
G
D²Pak
AUIRGS4062D1
E
C
G
TO-262
AUIRGSL4062D1
C
Collector
E
Emitter
Base part number
AUIRGB4062D1
AUIRGSL4062D1
AUIRGS4062D1
Package Type
TO-220
TO-262
D2Pak
Standard Pack
Form
Tube
Tube
Tube
Tape and Reel Left
Tape and Reel Right
Quantity
50
50
50
800
800
Complete Part Number
AUIRGB4062D1
AUIRGSL4062D1
AUIRGS4062D1
AUIRGS4062D1TRL
AUIRGS4062D1TRR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional
operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated
conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and
still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified
Parameter
Max.
Units
V_CES
Collector-to-Emitter Voltage
600
V
IC @ TC = 25°C
Continuous Collector Current
59
I_C @ T_C = 100°C
Continuous Collector Current
39
I_{NOM INAL}
Nominal Current
24
I_CM
Pulse Collector Current, V_GE = 15V
I_LM
c Clamped Inductive Load Current, V_GE = 20V
72
96
A
I_F @ T_C = 25°C
Diode Continous Forward Current
59
I_F @ T_C = 100°C
I_FM
Diode Continous Forward Current
d Diode Maximum Forward Current
39
96
V_GE
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
±20
V
±30
P_D @ T_C = 25°C
P_D @ T_C = 100°C
Maximum Power Dissipation
Maximum Power Dissipation
246
W
123
T_J
T_STG
Operating Junction and
Storage Temperature Range
-55 to +175
°C
Soldering Temperature, for 10 sec. (1.6mm from case)
300
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1N·m)
Thermal Resistance
R_θJC (IGBT)
R_θJC (Diode)
e ^Parameter
Thermal Resistance Junction-to-Case (IGBT)
e Thermal Resistance Junction-to-Case (Diode)
R_θCS
Thermal Resistance, Case-to-Sink (flat, greased surface)
R_θJA
Thermal Resistance, Junction-to-Ambient
*Qualification standards can be found at http://www.irf.com/
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.50
62
Max.
0.61
1.2
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–––
Units
°C/W
1 www.irf.com © 2013 International Rectifier
May 02, 2013