AUIRGP4066D1 Datasheet, PDF (6/13 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

AUIRGP4066D1/AUIRGP4066D1-E
55
50
45
40
35
30
400
500
600
700
diF /dt (A/μs)
Fig. 19 - Typ. Diode I_RR vs. di_F/dt
V_CC = 400V; V_GE = 15V; I_F = 75A; T_J = 175°C
3500
3000
2500
RG = 10Ω
RG = 22Ω
RG = 47Ω
RG = 100Ω
2000
1500
1000
500
25
75
125
175
IF (A)
Fig. 21 - Typ. Diode E_RR vs. I_F
T_J = 175°C
10000
Cies
1000
Coes
100
Cres
10
0
100 200 300 400 500
VCE (V)
Fig. 23 - Typ. Capacitance vs. V_CE
V_GE= 0V; f = 1MHz
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18000
16000
14000
12000
10000
8000
150A
100Ω
47Ω
22Ω
75A
10Ω
6000
38A
4000
2000
200
400
600
800
1000
diF /dt (A/μs)
Fig. 20 - Typ. Diode Q_RR vs. di_F/dt
V_CC = 400V; V_GE = 15V; T_J = 175°C
20
800
Tsc
15
10
600
Isc
400
5
200
0
0
8
10
12
14
16
18
VGE (V)
Fig. 22 - V_GE vs. Short Circuit Time
V_CC = 400V; T_C = 25°C
16
14
VCES = 400V
VCES = 300V
12
10
8
6
4
2
0
0 20 40 60 80 100 120 140 160
Q _G, Total Gate Charge (nC)
Fig. 24 - Typical Gate Charge vs. V_GE
I_CE = 75A; L = 485μH
May 02, 2013