AUIRGP4066D1 Datasheet, PDF (1/13 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

AUTOMOTIVE GRADE
AUIRGP4066D1
AUIRGP4066D1-E
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low V_{CE (ON)} Trench IGBT Technology
• Low switching losses
• Maximum Junction temperature 175 °C
C
G
V_CES = 600V
I_C(Nominal) = 75A
t_SC ≥ 5μs, T_J(max) = 175°C
• 5 μS short circuit SOA
• Square RBSOA
• 100% of the parts tested for 4X rated current (I_LM)
• Positive V_{CE (ON)} Temperature Coefficient
• Soft Recovery Co-Pak Diode
E
n-channel
C
V_CE(on) typ. = 1.70V
C
• Tight parameter distribution
• Lead-Free, RoHS Compliant
• Automotive Qualified *
Benefits
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
Low V_{CE (ON)} and Low Switching losses
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI
Ordering Information
Base part number
Package Type
AUIRGP4066D1
AUIRGP4066D1-E
TO-247AC
TO-247AD
E
C
E
G
GC
TO-247AC
AUIRGP4066D1
TO-247AD
AUIRGP4066D1-E
G
G ate
C
C o lle c to r
E
Em itter
Standard Pack
Form
Tube
Tube
Quantity
25
25
Complete Part Number
AUIRGP4066D1
AUIRGP4066D1-E
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional
operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated
conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and
still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
Max.
Units
V_CES
I_C @ T_C = 25°C
IC @ TC = 100°C
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
600
V
g 140
90
I_{NOM INA L}
I_CM
I_LM
I_{F NOMINAL}
IFM
Nominal Current
Pulse Collector Current V_GE = 15V
c Clamped Inductive Load Current V_GE = 20V
d Diode Nominal Current
d Diode Maximum Forward Current
75
225
300
A
75g
300
V_GE
Continuous Gate-to-Emitter Voltage
±20
V
Transient Gate-to-Emitter Voltage
±30
P_D @ T_C = 25°C
PD @ TC = 100°C
Maximum Power Dissipation
Maximum Power Dissipation
454
W
227
T_J
T_{ST G}
Operating Junction and
Storage Temperature Range
-55 to +175
°C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Thermal Resistance
R_θJC (IGBT)
R_θJC (Diode)
R_θCS
R_θJA
f ^Parameter
Thermal Resistance Junction-to-Case-(each IGBT)
f Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
Typ.
–––
–––
–––
–––
–––
0.24
–––
40
Max.
0.33
0.53
–––
–––
Units
°C/W
*Qualification standards can be found at http://www.irf.com/
1 www.irf.com © 2013 International Rectifier
May 02, 2013