AUIRF7732S2TR Datasheet, PDF (6/12 Pages) International Rectifier – DirectFET Power MOSFET

1000
100
10
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
1msec _100μsec
1
Tc = 25°C
Tj = 175°C
Single Pulse
DC _10msec
0.1
0.1
1
10
100
VDS , Drain-toSource Voltage (V)
Fig 13. Maximum Safe Operating Area
10
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
AUIRF7732S2TR/TR1
200
ID
TOP 6.4A
160
17A
BOTTOM 33A
120
80
40
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Temperature
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Duty Cycle = Single Pulse
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
0.01
10
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
Fig 16. Typical Avalanche Current vs.Pulsewidth
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1.0E-01
May 08, 2012