AUIRF7732S2TR Datasheet, PDF (1/12 Pages) International Rectifier – DirectFET Power MOSFET

• Advanced Process Technology
• Optimized for Automotive DC-DC, Motor Drive and
other Heavy Load Applications
• Exceptionally Small Footprint and Low Profile
• High Power Density
• Low Parasitic Parameters
• Dual Sided Cooling
• 175°C Operating Temperature
• Repetitive Avalanche Capability for Robustness and
Reliability
• Lead free, RoHS and Halogen free
AUIARUFI7R7F3727S322TSR2/PTRbF1
DirectFET^® Power MOSFET ‚
V_(BR)DSS
R_DS(on) typ.
max.
40V
5.5mΩ
6.95mΩ
I_{D (Silicon Limited)}
Q_g
55A
30nC
S
D
G
D
S
Applicable DirectFET Outline and Substrate Outline 
SB
SC
M2
M4
SC
L4
DirectFET™ ISOMETRIC
L6
L8
Description
The AUIRF7732S2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^® pack-
aging to achieve low gate charge as well as the lowest on-state resistance in a package that has the footprint which is 38% smaller than
an SO-8 and only 0.7mm profile. The DirectFET^® package is compatible with existing layout geometries used in power applications, PCB
assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding
the manufacturing methods and processes. The DirectFET^® package allows dual sided cooling to maximize thermal transfer in automotive
power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET^®
packaging platform coupled with the latest silicon technology allows the AUIRF7732S2 to offer substantial system level savings and
performance improvement specifically in high frequency DC-DC, motor drive and other heavy load applications on ICE, HEV and EV
platforms. This MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area . Additional
features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for high current automotive applications.
Ordering Information
Base Part Number
Package Type
AUIRF7732S2
AUIRF7732S2
DirectFET2 Small -Can
DirectFET2 Small -Can
Standard Pack
Form
Tape and Reel
Tape and Reel Option 1
Quantity
4800
1000
Complete part Number
AUIRF7732S2TR
AUIRF7732S2TR1
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure
to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings
are measured under board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.
V_DS
V_GS
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ TA = 25°C
I_DM
P_D @TC = 25°C
P_D @TA = 25°C
EAS
EAS (tested)
IAR
EAR
T_P
T_J
T_STG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
f Continuous Drain Current, V_GS @ 10V (Silicon Limited)
f Continuous Drain Current, V_GS @ 10V (Silicon Limited)
e Continuous Drain Current, V_GS @ 10V (Silicon Limited)
i Pulsed Drain Current
f Power Dissipation
e Power Dissipation
h Single Pulse Avalanche Energy (Thermally Limited)
h Single Pulse Avalanche Energy Tested Value
Ãg Avalanche Current
g Repetitive Avalanche Energy
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Max.
40
± 20
55
39
14
220
41
2.5
45
100
See Fig. 18a,18b,16,17
260
-55 to + 175
Units
V
A
W
mJ
A
mJ
°C
HEXFET^® is a registered trademark of International Rectifier.
1 www.irf.com © 2012 International Rectifier
May 08, 2012