RIC7113L4_15 Datasheet, PDF (5/9 Pages) International Rectifier – RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER

Radiation characteristics
RIC7113L4
International Rectifier radiation hardened Gate Drivers have been characterized in heavy ion environment
for Single Event Effects (SEE). Single Event Effects characterization data is illustrated below. For Static Bias
Test Conditions refer to figure 8.
Single Event Effect Safe Operating Area
Ion
LET
Energy
MeV/(mg/cm²)) (MeV)
Br
37
284
I
60
344
Au
82
346
I
85
344
Au
100
346
Angle
(degrees)
0
0
0
45
35
@V_BS= 10V
400
325
250
400
400
V_S (V)
@V_BS= 15V
400
250
200
400
400
Note: VCC/VDD = 20V, except for LET=100, then VCC/VDD = 17.5V
@V_BS= 17.5V
400
200
175
350
350
450
400
350
300
250
200
150
100
50
0
-1¹0⁰
STATIC BIAS
-155
VB (V)
-1177..55
Br, 0° angle
I, 0° angle
Au, 0° angle
I, 45° angle
Au, 35° angle
Single Event Effect, Safe Operating Area
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