RIC7113L4_15 Datasheet, PDF (4/9 Pages) International Rectifier – RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER

RIC7113L4
Radiation characteristics
Radiation Performance
International Rectifier Radiation Hardened gate drivers are tested to verify their hardness capability. The
hardness assurance program at International rectifier uses a Cobalt-60 (⁶⁰ Co) source and heavy ion
irradiation.
Every wafer shall be tested per MIL-STD-883, Method 1019, test condition A “Ionizing Radiation
(Total Dose) Test Procedure”.
Both pre- and post- irradiation performances are tested and specified using the same drive circuitry and test
conditions to provide a direct comparison.
For Static Irradiation Test Conditions refer to figure 7.
Static Electrical Characteristics
Symbol Parameter
V_IH
Logic “1” Input Voltage
V_IL
Logic “0” Input Voltage
V_OH
V_OL
I_LK
I_QBS
I_QCC
I_QDD
I_IN+
I_IN-
V_BSUV+
V_BSUV-
V_CCUV+
V_CCUV-
I_O+
I_O-
High Level Output Voltage, V_BIAS - V_O
Low Level Output Voltage, V_O
Offset Supply Leakage Current
Quiescent V_BS Supply Current
Quiescent V_CC Supply Current
Quiescent V_DD Supply Current
Logic “1” Input Bias Current
Logic “0” Input Bias Current
V_BS Supply Undervoltage Positive
Going Threshold
V_BS Supply Undervoltage Negative
Going Threshold
V_CC Supply Undervoltage Positive
Going Threshold
V_CC Supply Undervoltage Negative
Going Threshold
Output High Short Circuit Pulsed
Current *
Output Low Short Circuit Pulsed
Current *
* Guaranteed by design, not tested
Tj = 25°C
100K Rads (Si)
Min
Max
3.1
—
6.4
—
9.5
—
12.5
—
—
1.6
—
3.8
6.0
—
8.3
—
1.2
—
0.1
—
50
—
230
—
340
—
30
—
40
—
1.0
7.5
9.7
7.0
9.4
7.4
9.9
7.0
9.6
2.0
—
2.0
—
Units
V
V
µA
V
A
4
Test Conditions
VDD = 5V
VDD = 10V
VDD = 15V
VDD = 20V
VDD = 5V
VDD = 10V
VDD = 15V
VDD = 20V
V_IN =V_IH, I_O = 0A
V_IN =V_IH, I_O = 0A
VB =VS = 400V
VIN =0V or VDD
VIN =0V or VDD
VIN =0V or VDD
VIN =VDD
VIN =0V
VO =0V, VIN =VDD
PW < 10 µs
VO =15V, VIN =0V
PW < 10 µs
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