JANTX2N6851 Datasheet, PDF (5/6 Pages) International Rectifier – POWER MOSFET P-CHANNEL(BVdss=-200V, Rds(on)=0.80ohm, Id=-4.0A)

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JANTX2N6851, JANTXV2N6851 Device
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Fig. 11 — Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration
Fig. 12a — Unclamped Inductive Test Circuit
Fig. 12b — Unclamped Inductive Waveforms
Fig. 13a — Gate Charge Test Circuit
Fig. 13b — Basic Gate Charge Waveform
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