JANTX2N6851 Datasheet, PDF (1/6 Pages) International Rectifier – POWER MOSFET P-CHANNEL(BVdss=-200V, Rds(on)=0.80ohm, Id=-4.0A)

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Provisional Data Sheet No. PD-9.551B
JANTX2N6851
HEXFET^® POWER MOSFET
JANTXV2N6851
[REF:MIL-PRF-19500/564]
[GENERIC:IRFF9230]
P-CHANNEL
-200 Volt, 0.80Ω HEXFET
HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transis-
tors. The efficient geometry achieves very low on-
state resistance combined with high transconductance.
HEXFET transistors also feature all of the well-es-
tablish advantages of MOSFETs, such as voltage
control, very fast switching, ease of paralleling and
electrical parameter temperature stability. They are
well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio
amplifiers, and high energy pulse circuits, and virtu-
ally any application where high reliability is required.
Product Summary
Part Number
BVDSS
JANTX2N6851
JANTXV2N6851
-200V
Features:
s Avalanche Energy Rating
s Dynamic dv/dt Rating
s Simple Drive Requirements
s Ease of Paralleling
s Hermetically Sealed
RDS(on)
0.80Ω
ID
-4.0A
Absolute Maximum Ratings
Parameter
ID @ VGS = -10V, TC = 25°C Continuous Drain Current
ID @ VGS = -10V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current Œ
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
Peak Diode Recovery dv/dt Ž
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
JANTX2N6851, JANTXV2N6851 Units
-4.0
-2.4
A
-16
25
W
0.20
W/K 
±20
V
-5.0
V/ns
-55 to 150
300 (0.063 in. (1.6mm) from ^oC
case for 10.5 seconds)
0.98 (typical)
g
To Order