JANSR2N7423 Datasheet, PDF (5/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA)

Pre-Irradiation
IRHM9250
8000
6000
4000
 VGS = 0V, f = 1MHz
C_iss = C_gs + C_{gd ,} C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
 C_iss
C _oss
2000
C _rss
0
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 _{ ID = -14 A}
16
 ^{VDS = -160V}
V_DS
V_DS
=
=
-100V
-_40V
12
8
4
 FOR TEST CIRCUIT
SEE FIGURE 13
0
0
50
100
150
200
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
 T_J = 150^° C
10
 T_J = 25^° C
1
0.1
0.0
 ^VGS ^{= 0 V}
0.5 1.0 1.5 2.0 2.5 3.0 3.5
-V_SD ,Source-to-Drain Voltage (V)
1000
 OPERATION IN THIS AREA LIMITED
BY R_DS(on)
100
 100us
10
 1ms
 ^{TC = 25°C}
T_J = 150 ° C
 10ms
Single Pulse
1
10
100
1000
-V_DS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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Fig 8. Maximum Safe Operating Area
5