JANSR2N7423 Datasheet, PDF (3/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA)

RPraed-iIarrtaiodniaCtihoanracteristics
IRHM9250
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter
100K Rads(Si)¹
Min Max
300K Rads (Si)²
Min Max
Units
Test Conditions
BV_DSS
VGS(th)
I_GSS
I_GSS
I_DSS
R_DS(on)
R_DS(on)
V_SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source ➃
On-State Resistance (TO-3)
Static Drain-to-Source ➃
On-State Resistance (TO-254AA)
Diode Forward Voltage ➃
-200
-2.0
—
—
—
—
—
—
— -200 —
V
-4.0 -2.0 -5.0
-100
100
— -100 _nA
— 100
-25
— -25 µA
0.315 — 0.315 Ω
0.315 — 0.315 Ω
-3.6 — -3.6 V
V_GS = 0V, I_D = -1.0mA
VGS = V_DS, I_D = -1.0mA
V_GS = -20V
V_GS = 20 V
V_DS=-160V, V_GS =0V
VGS = -12V, I_D =-9.0A
VGS = -12V, I_D =-9.0A
V_GS = 0V, IS = -14A
1. IRHM9250 (JANSR2N7423)
2. IRHM93250 (JANSF2N7423)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
LET
Energy Range
MeV/(mg/cm²)) (MeV) (µm)
VDS(V)
@VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V
Cu
28
285
43
-200
-200
-200
200
—
Br
36.8
305
39
-200
-200
-160
-75
—
-250
-200
-150
-100
-50
0
0
Cu
Br
5
10
15
20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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