JANSR2N7269 Datasheet, PDF (5/12 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET THRU-HOLE

Post-Irradiation
IRHM7250, JANSR2N7269
Fig 5. Typical Zero Gate Voltage Drain
Current Vs. Total Dose Exposure
Fig 6. Typical On-State Resistance Vs.
Neutron Fluence Level
Fig 8a. Gate Stress of V_GSS
Equals 12 Volts During
Radiation
Fig 7. Typical Transient Response Fig 8b. V_DSS Stress Equals
of Rad Hard HEXFET During 80% of B_VDSS During Radiation
1x10¹² Rad (Si)/Sec Exposure
www.irf.com
Fig 9. High Dose Rate
(Gamma Dot) Test Circuit
5