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JANSR2N7269 Datasheet, PDF (3/12 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET THRU-HOLE
Radiation Characteristics
IRHM7250, JANSR2N7269
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ‘
Parameter
100K Rads(Si)1
Min Max
600 to 1000K Rads (Si)2 Units
Min Max
Test Conditions
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Drain-to-Source Breakdown Voltage 200
Gate Threshold Voltage 
2.0
Gate-to-Source Leakage Forward —
Gate-to-Source Leakage Reverse —
Zero Gate Voltage Drain Current
—
Static Drain-to-Source 
—
On-State Resistance (TO-3)
Static Drain-to-Source 
—
On-State Resistance (TO-254AA)
Diode Forward Voltage 
—
—
200
—V
4.0 1.25 4.5
100
-100
— 100 nA
— -100
25
—
50 µA
0.094 — 0.149 Ω
0.10
— 0.155 Ω
1.4
—
1.4 V
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20 V
VDS=160V, VGS =0V
VGS = 12V, ID =16A
VGS = 12V, ID =16A
VGS = 0V, IS = 26A
1. Part number IRHM7250 (JANSR2N7269)
2. Part numbers IRHM3250 (JANSF2N7269), IRHM4250 (JANSG2N7269) and IRHM8250 (JANSH2N7269)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
LET
MeV/(mg/cm2))
Cu
28
Br
36.8
Energy
(MeV)
285
305
Range
(µm)
43
39
VDS(V)
@VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
190
180
170
125
—
100
100
100
50
—
200
150
100
Cu
Br
50
0
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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