IRHG57110 Datasheet, PDF (5/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036)

Pre-Irradiation
IRHG57110
800
 VGS = 0V, f = 1MHz
C_iss = C_gs + C_{gd ,} C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
600
400
 C_iss
C _oss
200
0
1
C _rss
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 _{ ID = 1.6A}
16
12
 ^{VDS = 80V}
V_DS = 50V
V_DS = 20V
8
4
 FOR TEST CIRCUIT
SEE FIGURE 13
0
0
4
8
12
16
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
10
 T_J = 150^° C
10
OPERATION IN THIS AREA LIMITED
BY RDS(on)
1
 T_J = 25 ^° C
0.1
0.4
 ^VGS ^{= 0 V}
0.6
0.8
1.0
1.2
1.4
V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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1
1ms
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
10ms
100
VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
5