IRHG57110 Datasheet, PDF (1/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036)

PD - 94432A
IRHG57110
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (MO-036)
Product Summary
Part Number Radiation Level RDS(on)
IRHG57110 100K Rads (Si) 0.29Ω
IRHG53110 300K Rads (Si) 0.29Ω
IRHG54110 600K Rads (Si) 0.29Ω
IRHG58110 1000K Rads (Si) 0.31Ω
ID
1.6A
1.6A
1.6A
1.6A
100V, Quad N-CHANNEL
RAD-Hard^™ HEXFET^®
4_# ^TECHNOLOGY
MO-036AB
International Rectifier’s RAD-Hard^TM HEXFET^® MOSFET
Technology provides high performance power MOSFETs
for space applications. This technology has over a decade
of proven performance and reliability in satellite applica-
tions. These devices have been characterized for both
Total Dose and Single Event Effects (SEE). The combina-
tion of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC con-
verters and motor control. These devices retain all of the
well established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and tempera-
ture stability of electrical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
Absolute Maximum Ratings (Per Die)
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
1.6
1.0
A
6.4
1.4
W
0.011
W/°C
±20
V
130
mJ
1.6
A
0.14
mJ
6.5
V/ns
-55 to 150
o_C
300 (0.63 in./1.6 mm from case for 10s)
1.3 (Typical)
g
For footnotes refer to the last page
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1
08/01/02