IRGR2B60KDPBF_15 Datasheet, PDF (5/12 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-FAST SOFT RECOVERY DIODE

10
8
ICE = 1.0A
ICE = 2.0A
6
ICE = 4.0A
4
2
0
5
10
15
20
VGE (V)
Fig. 12 - Typical V_CE vs. V_GE
T_J = 150°C
250
200
EON
150
IRGR2B60KDPbF
12
10
8
6
4
TJ = 25°C
TJ = 150°C
2
0
4
6
8 10 12 14 16
VGE (V)
Fig. 13 - Typ. Transfer Characteristics
V_CE = 50V; tp = 20µs
1000
tdOFF
100
tF
100
50
EOFF
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
IC (A)
Fig. 14 - Typ. Energy Loss vs. I_C
T_J = 150°C; L = 7.1mH; V_CE = 400V, R_G = 100; V_GE = 15V
220
200
180
160
EON
140
120
EOFF
100
80
60
0
100 200 300 400 500
RG ()
Fig. 16 - Typ. Energy Loss vs. R_G
T_J = 150°C; L = 7.1mH; V_CE = 400V, I_CE = 2.0A; V_GE = 15V
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tdON
10
tR
1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
IC (A)
Fig. 15 - Typ. Switching Time vs. I_C
T_J = 150°C; L = 7.1mH; V_CE = 400V, R_G = 100; V_GE = 15V
1000
tdOFF
100
tF
tdON
10
tR
1
0
100 200 300 400 500
RG ()
Fig. 17 - Typ. Switching Time vs. R_G
T_J = 150°C; L = 7.1mH; V_CE = 400V, I_CE = 2.0A; V_GE = 15V
January 8, 2013