IRGR2B60KDPBF_15 Datasheet, PDF (1/12 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-FAST SOFT RECOVERY DIODE

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-FAST
SOFT RECOVERY DIODE
Features
 Low V_{CE (ON)} Non Punch Through IGBT technology
 Low Diode V_F
 10µs Short Circuit Capability
 Square RBSOA
 Ultra-soft Diode Reverse Recovery Characteristics
 Positive V_{CE (ON)} temperature co-efficient
 Lead-free
Benefits
 Benchmark Efficiency for Motor Control
 Rugged transient performance for increased reliability
 Excellent current sharing in parallel operation
 Low EMI
IRGR2B60KDPbF
C
G
E
n-channel
C
V_CES = 600V
I_C = 3.7A, T_C = 100°C
T_J(MAX) = 150°C
V_CE(ON) typ. = 1.95V
G
Gate
E
G
D-Pak
C
Collector
E
Emitter
Base part number
IRGR2B60KDPbF
Package Type
D-Pak
Standard Pack
Form
Tube
Quantity
75
Tape and Reel
2000
Tape and Reel Left
3000
Tape and Reel Right
3000
Orderable Part Number
IRGR2B60KDPbF
IRGR2B60KDTRPbF
IRGR2B60KDTRLPbF
IRGR2B60KDTRRPbF
Absolute Maximum Ratings
Parameter
V_CES
Collector-to-Emitter Voltage
I_C @ T_C = 25°C Continuous Collector Current
I_C @ T_C = 100°C Continuous Collector Current
I_CM
Pulse Collector Current, V_GE = 15V 
I_LM
Clamped Inductive Load Current, V_GE = 20V 
I_F @ T_C = 25°C Diode Continuous Forward Current
I_F @ T_C = 100°C Diode Continuous Forward Current
I_FM
Diode Maximum Forward Current 
V_GE
Continuous Gate-to-Emitter Voltage
P_D @ T_C = 25°C Maximum Power Dissipation
P_D @ T_C = 100°C Maximum Power Dissipation
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Max.
600
6.3
3.7
8.0
8.0
6.3
3.7
8.0
±20
35
14
-55 to +150
300
(0.063 in.(1.6mm) from case)
Units
V
A
V
W
°C
Thermal Resistance
Parameter
R_θJC (IGBT) Junction-to-Case (IGBT) 
R_θJC (Diode) Junction-to-Case (Diode) 
R_θJA
Junction-to-Ambient (PCB Mount) 
Min.
–––
–––
–––
Typ.
–––
–––
–––
Max.
3.56
7.70
50
Units
°C/W
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January 8, 2013