IRGP6690DPBF_15 Datasheet, PDF (5/13 Pages) International Rectifier – Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

7
6
ICE = 37A
5
ICE = 75A
ICE = 150A
4
3
2
1
0
5
14
10
15
20
VGE (V)
Fig. 12 - Typical V_CE vs. V_GE
T_J = 175°C
12
10
EON
8
6
4
EOFF
2
0
0 20 40 60 80 100 120 140 160
IC (A)
Fig. 14 - Typ. Energy Loss vs. I_C
T_J = 175°C; L = 400µH; V_CE = 400V, R_G = 10Ω; V_GE = 15V
12
10
EON
8
6
EOFF
4
2
0
0
20
40
60
80
100
Rg (Ω)
Fig. 16 - Typ. Energy Loss vs. R_G
T_J = 175°C; L = 400µH; V_CE = 400V, I_CE = 75A; V_GE = 15V
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IRGP6690DPbF/IRGP6690D-EPbF
300
250
TJ = 25°C
TJ = 175°C
200
150
100
50
0
2 4 6 8 10 12 14 16
VGE (V)
Fig. 13 - Typ. Transfer Characteristics
V_CE = 50V; tp = 20µs
1000
tdOFF
100
tF
tdON
tR
10
0
20 40 60 80 100 120 140 160
IC (A)
Fig. 15 - Typ. Switching Time vs. I_C
T_J = 175°C; L = 400µH; V_CE = 400V, R_G = 10Ω; V_GE = 15V
10000
1000
tdOFF
100
0
tR
tdON
10
20
30
RG (Ω)
tF
40
50
Fig. 17 - Typ. Switching Time vs. R_G
T_J = 175°C; L = 400µH; V_CE = 400V, I_CE = 75A; V_GE = 15V
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November 14, 2014