IRGP6690DPBF_15 Datasheet, PDF (1/13 Pages) International Rectifier – Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

V_CES = 600V
I_C = 90A, T_C =100°C
t_SC ≥ 5µs, T_J(max) = 175°C
V_CE(ON) typ. = 1.65V @ IC = 75A
Applications
• Welding
• H Bridge Converters
IRGP6690DPbF
IRGP6690D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C
C
C
G
E
n-channel
G
Gate
GCE
IRGP6690DPbF
TO-247AC
C
Collector
E
GC
IRGP6690D-EPbF
TO-247AD
E
Emitter
Features
Low V_CE(ON) and switching losses
Optimized diode for full bridge hard switch converters
Square RBSOA and maximum junction temperature 175°C
5µs short circuit SOA
Positive V_{CE (ON)} temperature coefficient
Lead-free, RoHS compliant
Benefits
High efficiency in a wide range of applications
Optimized for welding and H bridge converters
Improved reliability due to rugged hard switching
performance and higher power capability
Enables short circuit protection scheme
Excellent current sharing in parallel operation
Environmentally friendly
Base part number
IRGP6690DPBF
IRGP6690D-EPBF
Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRGP6690DPBF
IRGP6690D-EPBF
Absolute Maximum Ratings
Parameter
V_CES
Collector-to-Emitter Voltage
I_C @ T_C = 25°C
I_C @ T_C = 100°C
Continuous Collector Current
Continuous Collector Current
I_CM
Pulse Collector Current, V_GE = 15V
I_LM
Clamped Inductive Load Current, V_GE = 20V 
I_FRM @ T_C = 100°C Diode Repetitive Peak Forward Current
I_FM
Diode Maximum Forward Current 
V_GE
Continuous Gate-to-Emitter Voltage
P_D @ T_C = 25°C Maximum Power Dissipation
P_D @ T_C = 100°C
T_J
T_STG
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
600
140
90
225
300
45
300
±20
483
241
-40 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
R_θJC (IGBT)
R_θJC (Diode)
R_θCS
R_θJA
Thermal Resistance Junction-to-Case-(each IGBT) 
Thermal Resistance Junction-to-Case-(each Diode) 
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
Max.
0.31
2.10
–––
40
Units
V
A
V
W
C
Units
°C/W
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November 14, 2014