IRG7RC10FDPBF Datasheet, PDF (5/11 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRG7RC10FDPbF
20
20
15
15
10
ICE = 2.5A
ICE = 5.0A
ICE = 10A
5
10
TJ = 150°C
5
TJ = 25°C
0
5
600
10
15
20
VGE (V)
Fig. 12 - Typical V_CE vs. V_GE
T_J = 150°C
500
400
EOFF
300
0
4 5 6 7 8 9 10 11 12
VGE, Gate-to-Emitter Voltage (V)
Fig. 13 - Typ. Transfer Characteristics
V_CE = 50V; tp = 20μs
1000
tF
100
tdON
tdOFF
200
EON
100
10
tR
0
0
2
4
6
8
10
IC (A)
Fig. 14 - Typ. Energy Loss vs. I_C
T_J = 150°C; L = 1.6mH; V_CE = 400V, R_G = 100; V_GE = 15V.
360
340
320
EOFF
300
1
0
2
4
6
8
10
IC (A)
Fig. 15 - Typ. Switching Time vs. I_C
T_J = 150°C; L=1.6mH; V_CE= 400V
R_G= 100; V_GE= 15V
1000
tF
100 _tdOFF
280
EON
260
240
220
tdON
10
tR
200
20 40 60 80 100 120 140 160
1
0 20 40 60 80 100 120 140 160
RG ()
Fig. 16 - Typ. Energy Loss vs. R_G
T_J = 150°C; L = 1.6mH; V_CE = 400V, I_CE = 5.0A; V_GE = 15V
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RG ()
Fig. 17- Typ. Switching Time vs. R_G
T_J = 150°C; L=1.6mH; V_CE= 400V
I_CE= 5.0A; V_GE= 15V
5