IRG7RC10FDPBF Datasheet, PDF (1/11 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low V_CE(on)
• Zero V_CE(on) temperature coefficient
• 3µs Short Circuit Capability
• Ultra Fast Soft Recovery Co-pak Diode
• Square RBSOA
Benefits
• Benchmark Efficiency for Motor Control
Applications
• Rugged Transient Performance
• Low EMI
Applications
• Air Conditioner Compressor
• Refrigerator
• Vacuum Cleaner
• Low Frequency Inverter
PD - 97759
IRG7RC10FDPbF
C
G
E
n-channel
V_CES = 600V
I_C = 9.0A, T_C = 100°C
t_sc > 3μs, T_jmax = 150°C
V_{CE(on) typ.} = 1.6V
@ I_C = 5A
C
E
G
D-Pak
IRG7RC10FDPbF
G
Gate
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
VCES
IC@ TC = 25°C
IC@ TC = 100°C
ICM
ILM
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current, VGE = 15V
c Clamped Inductive Load Current, V_GE = 20V
IF@TC=25°C
Diode Continuous Forward Current
IF@TC=100°C
IFM
VGE
PD @ TC =25°C
PD @ TC =100°C
TJ
Diode Continuous Forward Current
d Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
R_JC
RJC
R_JA
Parameter
e Junction-to-Case - IGBT
e Junction-to-Case - Diode
f Junction-to-Ambient (PCB Mount Steady State)
1
Max.
600
16.5
9.0
20
20
16.5
9.0
20
± 30
61
24
-55 to + 150
300 (0.063 in. (1.6mm) from case)
Min.
—
—
—
Typ.
—
—
—
Max.
2.1
6.1
50
Units
V
A
V
W
°C
Units
°C/W
www.irf.com
02/01/12