IRG4PC40F Datasheet, PDF (5/8 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A)

IRG4PC40F
4000
3000
2000
V_GE = 0V
f = 1 MHz
Cies = Cge + Cgc + Cce
Cres = Cce
Coes = Cce + Cgc
SHORTED
C ies
1000
C oes
C res
0
A
1
10
100
V_{C E} , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
20
V_CE = 400V
IC = 27A
16
12
8
4
0
A
0
20
40
60
80
100
120
Q_g, Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
2.60
V_CC = 480V
V _GE = 15V
T _J = 25°C
2.50 I _C = 27A
2.40
2.30
2.20
2.10
0
A
10
20
30
40
50
60
R _G , Gate Resistance _(Ω)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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10
IC = 54A
I_C = 27A
1
I_C = 14A
R _G = 10 _Ω
V GE = 15V
0.1
V CC = 480V _A
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J , Junction Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5