IRG4PC40F Datasheet, PDF (2/8 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A)

IRG4PC40F
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)CES
V_(BR)ECS
Collector-to-Emitter Breakdown Voltage 600 — —
Emitter-to-Collector Breakdown Voltage T 18 — —
V V_GE = 0V, I_C = 250µA
V V_GE = 0V, I_C = 1.0A
∆V_(BR)CES/∆T_J Temperature Coeff. of Breakdown Voltage — 0.70 — V/°C V_GE = 0V, I_C = 1.0mA
— 1.50 1.7
I_C = 27A
V_GE = 15V
V_CE(ON)
Collector-to-Emitter Saturation Voltage
— 1.85 —
V
I_C = 49A
See Fig.2, 5
— 1.56 —
I_C = 27A , T_J = 150°C
V_GE(th)
Gate Threshold Voltage
3.0 — 6.0
V_CE = V_GE, I_C = 250µA
∆V_GE(th)/∆T_J Temperature Coeff. of Threshold Voltage — -12 — mV/°C V_CE = V_GE, I_C = 250µA
g_fe
Forward Transconductance U
9.2 12 — S V_CE = 100V, I_C = 27A
I_CES
Zero Gate Voltage Collector Current
— — 250 _{µ A} V_GE = 0V, V_CE = 600V
— — 2.0
V_GE = 0V, V_CE = 10V, T_J = 25°C
— — 1000
V_GE = 0V, V_CE = 600V, T_J = 150°C
I_GES
Gate-to-Emitter Leakage Current
— — ±100 n A V_GE = ±20V
Switching Characteristics @ T_J = 25°C (unless otherwise specified)
Q_g
Q_ge
Q_gc
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
t_d(on)
t_r
t_d(off)
t_f
E_ts
L_E
C_ies
C_oes
C_res
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
— 100 150
I_C = 27A
— 15 23
— 35 53
nC V_CC = 400V
V_GE = 15V
See Fig. 8
— 26 —
— 18 — _ns T_J = 25°C
— 240 360
I_C = 27A, V_CC = 480V
— 170 250
V_GE = 15V, R_G = 10Ω
— 0.37 —
Energy losses include "tail"
— 1.81 — mJ See Fig. 10, 11, 13, 14
— 2.18 2.8
— 25 —
T_J = 150°C,
— 21 —
— 380 —
ns ^{IC = 27A, VCC = 480V}
V_GE = 15V, R_G = 10Ω
— 310 —
Energy losses include "tail"
— 3.9 — mJ See Fig. 13, 14
— 13 — nH Measured 5mm from package
— 2200 —
V_GE = 0V
— 140 —
— 29 —
pF V_CC = 30V
ƒ = 1.0MHz
See Fig. 7
Q Repetitive rating; V_GE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R V_CC = 80%(V_CES), V_GE = 20V, L = 10µH, R_G = 10Ω,
(See fig. 13a)
S Repetitive rating; pulse width limited by maximum
junction temperature.
T Pulse width ≤ 80µs; duty factor ≤ 0.1%.
U Pulse width 5.0µs, single shot.
2
www.irf.com