IRFRU9214 Datasheet, PDF (5/10 Pages) International Rectifier – Power MOSFET(Vdss=-250V, Rds(on)=3.0ohm, Id=-2.7A)

3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
T_C , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
IRFR/U9214
V_DS
V_GS
R_G
R_D
D.U.T.
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
-
+ V_DD
Fig 10a. Switching Time Test Circuit
V_GS
10%
t_d(on) t_r
t_d(off) t_f
90%
V_DS
Fig 10b. Switching Time Waveforms
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
P_DM
t₁
t₂
Notes:
1. Duty factor D = t₁ / t ₂
2. Peak T _J = P _DM x Z _thJC + T_C
0.0001
0.001
0.01
0.1
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case