IRFRU9214 Datasheet, PDF (2/10 Pages) International Rectifier – Power MOSFET(Vdss=-250V, Rds(on)=3.0ohm, Id=-2.7A)

IRFR/U9214
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
V_(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
I_DSS
Drain-to-Source Leakage Current
I_GSS
Qg
Q_gs
Q_gd
td(on)
tr
td(off)
t_f
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
L_D
Internal Drain Inductance
L_S
Internal Source Inductance
Ciss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
-250 ––– ––– V V_GS = 0V, I_D = -250µA
––– -0.25 ––– V/°C Reference to 25°C, I_D = -1mA
––– ––– 3.0 Ω VGS = -10V, ID = -1.7A „
-2.0 ––– -4.0 V VDS = VGS, ID = -250µA
0.9 ––– ––– S VDS = -50V, ID = -1.7A
––– ––– -100 _µA V_DS = -250V, V_GS = 0V
––– ––– -500
V_DS = -200V, V_GS = 0V, T_J = 150°C
––– ––– 100 _nA VGS = 20V
––– ––– -100
VGS = -20V
––– ––– 14
ID = -1.7A
––– ––– 3.1
––– ––– 6.8
nC V_DS = -200V
V_GS = -10V, See Fig. 6 and 13 „
––– 11 –––
VDD = -125V
––– 14 ––– _ns ID = -1.7A
––– 20 –––
RG =21 Ω
––– 17 –––
R_D =70 See Fig. 10 „
Between lead,
D
––– 4.5 –––
6mm (0.25in.)
nH
from package
G
––– 7.5 –––
and center of die contact…
S
––– 220 –––
VGS = 0V
––– 75 ––– pF V_DS = -25V
––– 11 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
V SD
Diode Forward Voltage
trr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– -2.7
A
MOSFET symbol
showing the
D
integral reverse
G
––– ––– -11
p-n junction diode.
S
––– ––– -5.8 V TJ = 25°C, IS = -2.7A, VGS = 0V „
––– 150 220 ns TJ = 25°C, IF = -1.7A
––– 870 1300 nC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting T_J = 25°C, L = 27 mH
R_G = 25Ω, I_AS = -2.7A. (See Figure 12)
ƒ I_SD ≤ -2.7A, di/dt ≤ 600A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 150°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
…This is applied for I-PAK, L_S of D-PAK is measured between
lead and center of die contact
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994