IRFRU024N Datasheet, PDF (5/10 Pages) International Rectifier – Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=17A⑤)

IRFR/U024N
20
16
12
8
4
0
A
25
50
75
100
125
150
175
T_C , C ase Tem perature (°C )
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
V_DS
V_GS
R_G
R_D
D.U.T.
4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+_-VDD
Fig 10a. Switching Time Test Circuit
V_DS
90%
10%
V_GS
t_d(on) t_r
t_d(off) t_f
Fig 10b. Switching Time Waveforms
D = 0.50
1
0 .2 0
0 .1 0
0 .0 5
0 .0 2
0 .0 1
0.1
S IN G L E P U L S E
(THERMAL R ESPON SE)
P_{D M}
t1
t2
Notes:
1. Duty factor D = t1 / t ₂
0.01
0.00001
0.0001
0.001
2. P eak T_J = P _{D M} x Z _thJC + T _C
A
0.01
0.1
1
t₁ , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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