IRFRU024N Datasheet, PDF (1/10 Pages) International Rectifier – Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=17A⑤)

PRELIMINARY
PD- 9.1336A
IRFR/U024N
HEXFET^® Power MOSFET
l Ultra Low On-Resistance
l Surface Mount (IRFR024N)
l Straight Lead (IRFU024N)
l Advanced Process Technology
l Fast Switching
G
l Fully Avalanche Rated
D
V_DSS = 55V
R_DS(on) = 0.075Ω
I_D = 17A…
S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
D -P ak
T O -2 52 A A
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
E_AS
I_AR
E_AR
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current †
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚†
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt Ġ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
17
12
68
45
0.30
± 20
71
10
4.5
5.0
-55 to + 175
300 (1.6mm from case )
Thermal Resistance
Parameter
Typ.
R_θJC
Junction-to-Case
–––
R_θJA
Case-to-Ambient (PCB mount)**
–––
R_θJA
Junction-to-Ambient
–––
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
www.irf.com
Max.
3.3
50
110
I-P a k
TO -251AA
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1