IRFH5004PBF Datasheet, PDF (5/8 Pages) International Rectifier – HEXFET Power MOSFET

6
ID = 50A
5
4
TJ = 125°C
3
2
TJ = 25°C
1
4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
IRFH5004PbF
1400
1200
1000
ID
TOP 11A
17A
BOTTOM 50A
800
600
400
200
0
25
50
75
100 125 150
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy vs. Drain Current
VDS
L
RG
20V
tp
D.U.T
I_AS
0.01Ω
15V
DRIVER
+
- ^VDD
A
Fig 14a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
I_AS
Fig 14b. Unclamped Inductive Waveforms
V_DS
V_GS
R_G
R_D
D.U.T.
V1_G0_SV
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
+_-VDD
Fig 15a. Switching Time Test Circuit
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V_DS
90%
10%
V_GS
t_{d(on) tr}
t_{d(off) tf}
Fig 15b. Switching Time Waveforms
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