IRFH5004PBF Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET Power MOSFET

PD -97450
IRFH5004PbF
HEXFET^® Power MOSFET
V_DS
R_{DS(on) max}
(@V_GS = 10V)
Q_{g (typical)}
R_{G (typical)}
I_D
(@T_c(Bottom) = 25°C)
40
V
2.6 mΩ
73
nC
1.2
Ω
h 100
A
PQFN 5X6 mm
Applications
• Secondary Side Synchronous Rectification
• Inverters for DC Motors
• DC-DC Brick Applications
• Boost Converters
Features and Benefits
Features
Benefits
Low R_DSon (≤ 2.6mΩ)
Low Thermal Resistance to PCB (≤ 0.5°C/W)
Lower Conduction Losses
Enables better thermal dissipation
100% Rg tested
Low Profile (≤ 0.9 mm)
Increased Reliability
results in Increased Power Density
Industry-Standard Pinout
⇒ Multi-Vendor Compatibility
Compatible with Existing Surface Mount Techniques
Easier Manufacturing
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Environmentally Friendlier
MSL1, Industrial Qualification
Increased Reliability
Orderable part number
Package Type
IRFH5004TRPBF
IRFH5004TR2PBF
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
1000
Note
Absolute Maximum Ratings
V_DS
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C(Bottom) = 25°C
I_D @ T_C(Bottom) = 100°C
I_DM
P_D @T_A = 25°C
P_D @ T_C(Bottom) = 25°C
T_J
T_STG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
h Continuous Drain Current, V_GS @ 10V
h Continuous Drain Current, V_GS @ 10V
c Pulsed Drain Current
g Power Dissipation
g Power Dissipation
g Linear Derating Factor
Operating Junction and
Storage Temperature Range
Notes  through † are on page 8
www.irf.com
Max.
40
±20
28
23
100
100
400
3.6
250
0.029
-55 to + 150
Units
V
A
W
W/°C
°C
1
02/08/2010