IRF9Z34NPBF Datasheet, PDF (5/9 Pages) International Rectifier – HEXFET® POWER MOSFET

20
15
10
5
0
25
50
75 100 125 150 175
T_C , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
IRF9Z34NPbF
V_DS
V_GS
R_G
R_D
D.U.T.
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
-
+ V_DD
Fig 10a. Switching Time Test Circuit
V_GS
10%
t_d(on) t_r
t_d(off) t_f
90%
V_DS
Fig 10b. Switching Time Waveforms
10
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
P_DM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
t₁, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case