IRF9Z34NPBF Datasheet, PDF (4/9 Pages) International Rectifier – HEXFET® POWER MOSFET

IRF9Z34NPbF
1200
1000
800
600
V _GS = 0V,
f = 1MHz
C_iss = C_gs + C_gd , C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C _gd
Ciss
Coss
400
Crss
200
0
A
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 _{I D = -10A}
16
12
V_DS = -44V
V_DS = -28V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
0
10
20
30
40
Q_G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10
T_J = 175°C
1
T_J = 25°C
0.1
0.2
V_GS = 0V _A
0.4
0.6
0.8
1.0
1.2
1.4
1.6
-V_SD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
100
10µs
100µs
10
1ms
T_C = 25°C
T_J = 175°C
Single Pulse
1
1
10
10ms
A
100
-V_DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area