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| IRF9Z34N Datasheet, PDF (5/8 Pages) International Rectifier – Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A) | |||
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20
15
10
5
0
25
50
75
100 125 150 175
TC, Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
IRF9Z34N
VDS
VGS
RG
RD
D.U.T.
-10V
Pulse Width ⤠1 µs
Duty Factor ⤠0.1 %
-
+ VDD
Fig 10a. Switching Time Test Circuit
VGS
10%
td(on) tr
td(off) tf
90%
VDS
Fig 10b. Switching Time Waveforms
10
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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