IRF9Z34N Datasheet, PDF (4/8 Pages) International Rectifier – Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A)

IRF9Z34N
1200
1000
800
V _GS = 0V,
f = 1MHz
C _{is s} = C _gs + C _gd , C_ds SH OR TE D
C _rss = C _gd
C _oss = C_{d s} + C _gd
C is s
600
C oss
400
C rs s
200
0
A
1
10
100
-V_{D S} , D rain-to-S ource V oltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
I _D = -10A
16
12
V_DS = -44V
V_DS = -28V
8
4
FOR TEST CIRCUIT
SEE F IGURE 13
0
A
0
10
20
30
40
Q _G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
OPE R ATIO N IN TH IS A RE A LIMITE D
BY R D S(o n)
10
T_J = 175°C
1
T_J = 25°C
0.1
0.2
VG S = 0V _A
0.4
0.6
0.8
1.0
1.2
1.4
1.6
-V_SD , Source-to-D rain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
100
1 0µs
100µ s
10
1m s
T_C = 25°C
T_J = 175°C
Sin gle Pu lse
1
1
10
10m s
A
100
-V_DS , Drain-to-Source V oltage (V )
Fig 8. Maximum Safe Operating Area